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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
Issue Dt:
08/08/1989
Application #:
07283642
Filing Dt:
12/13/1988
Inventors:
TAKASHI ESHITA, FUMITAKE MIENO, YUJI FURUMURA, KIKUO ITOH
Title:
METHOD OF GROWING A SINGLE CRYSTALLINE BETA-SIC LAYER ON A SILICON SUBSTRATE
Assignment: 1
Reel/Frame:
004992/0527Recorded: 12/13/1988Pages: 1
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST.
Assignors:
Exec Dt:
12/01/1988
Exec Dt:
12/01/1988
Exec Dt:
12/01/1988
Exec Dt:
12/01/1988
Assignee:
Correspondent:
ARMSTRONG, NIKAIDO, MARMELSTEIN &
KUBOVCIK
1725 K ST. N.W.
SUITE 912
WASHINGTON, DC 20006
Assignment: 2
Reel/Frame:
021976/0876Recorded: 12/05/2008Pages: 30
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
11/04/2008
Assignee:
7-1, NISHI-SHINJUKU 2-CHOME, SHINJUKU-KU
TOKYO, JAPAN 163-0722
Correspondent:
KRATZ, QUINTOS & HANSON, LLP
1420 K STREET, N.W.
SUITE 400
WASHINGTON, DC 20005

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