Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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01/15/1991
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Application #:
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07313648
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Filing Dt:
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02/21/1989
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Inventors:
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SHELDON ARONOWITZ, DONALD D. FORSYTHE, GEORGE P. WALKER, BHASKAR V. GADEPALLY
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Title:
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MOS MEMORY CELL WITH EXPONENTIALLY-PROFILED DOPING AND OFFSET FLOATING GATE TUNNEL OXIDATION
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST.
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2900 SEMICONDUCTOR DRIVE |
A DE CORP. |
SANTA CLARA, CALIFORNIA 95052-8090 |
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BROWN, MARTIN, HALLER & MC CLAIN |
110 WEST C STREET - 13TH FLOOR |
SAN DIEGO, CA 92101 |
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