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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
01/15/1991
Application #:
07313648
Filing Dt:
02/21/1989
Inventors:
SHELDON ARONOWITZ, DONALD D. FORSYTHE, GEORGE P. WALKER, BHASKAR V. GADEPALLY
Title:
MOS MEMORY CELL WITH EXPONENTIALLY-PROFILED DOPING AND OFFSET FLOATING GATE TUNNEL OXIDATION
Assignment: 1
Reel/Frame:
005047/0473Recorded: 02/21/1989Pages: 4
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST.
Assignors:
Exec Dt:
02/17/1989
Exec Dt:
02/17/1989
Exec Dt:
02/17/1989
Exec Dt:
02/17/1989
Assignee:
2900 SEMICONDUCTOR DRIVE
A DE CORP.
SANTA CLARA, CALIFORNIA 95052-8090
Correspondent:
BROWN, MARTIN, HALLER & MC CLAIN
110 WEST C STREET - 13TH FLOOR
SAN DIEGO, CA 92101

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