Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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08/20/1996
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Application #:
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08299217
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Filing Dt:
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08/31/1994
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Inventor:
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SHENG-HSING YANG
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Title:
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METHOD OF FABRICATING METAL A METAL GATE MOS TRANSISTOR WITH SELF- ALIGNED SOURCE AND DRAIN REGIONS AND SECOND CONDUCTIVITY TYPE CONTACT REGIONS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 3 INDUSTRY E. ROAD III |
| SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU CITY, TAIWAN |
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| RICHARD P. BERG |
| LADAS & PARRY |
| 5670 WILSHIRE BLVD. |
| STE. 2100 |
| LOS ANGELES, CA 90036 |
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