Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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10/08/1996
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Application #:
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08357403
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Filing Dt:
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12/16/1994
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Inventor:
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YOSHIHISA MATSUBARA
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Title:
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FABRICATION METHOD OF SEMICONDUCTOR DEVICE WITH REFRACTORY METAL SILICIDE FORMATION BY REMOVING NATIVE OXIDE IN HYDROGEN
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 7-1, SHIBA 5-CHOME, MINATO-KU |
| CORPORATION OF JAPAN |
| TOKYO, JAPAN |
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| OSTROLENK, FABER, GERB & SOFFEN |
| EDWARD A. MEILMAN |
| 1180 AVENUE OF THE AMERICAS |
| NEW YORK, NY 10036-8403 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1753 SHIMONMUMAMBE, NAKAHARA-KU |
| KAWASAKI, KANAGAWA, JAPAN 211-8668 |
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| SUGHRUE MION, PLLC |
| 2100 PENNSYLVANIA AVENUE, N.W. |
| WASHINGTON, DC 20037 |
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