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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
Issue Dt:
05/11/1999
Application #:
08785654
Filing Dt:
01/17/1997
Inventors:
MASAAKI NIDO, AKIRA USUI, YASUNORI MOCHIZUKI
Title:
METHOD FOR GROWING P-TYPE GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTORS BY VAPOR PHASE EPITAXY
Assignment: 1
Reel/Frame:
008403/0255Recorded: 01/17/1997Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
01/16/1997
Exec Dt:
01/16/1997
Exec Dt:
01/16/1997
Assignee:
7-1, SHIBA 5-CHOME, MINATO-KU
TOKYO, JAPAN
Correspondent:
HAYES, SOLOWAY, HENNESSEY ET AL
NORMAN P. SOLOWAY
175 CANAL STREET
MANCHESTER, NH 03101
Assignment: 2
Reel/Frame:
031532/0169Recorded: 11/01/2013Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
10/15/2013
Assignee:
129, SAMSUNG-RO, YEONGTONG-GU
SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Correspondent:
HOSANG LEE
C/O MCDERMOTT, WILL & EMERY LLP
500 NORTH CAPITOL ST., NW
WASHINGTON, DC 20001

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