Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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08/31/1999
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Application #:
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09044970
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Filing Dt:
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03/19/1998
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Inventor:
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CHI-FA LIN
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Title:
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COMBINED IN-SITU HIGH DENSITY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (HDPCVD) AND CHEMICAL MECHANICAL POLISHING (CMP) PROCESS TO FORM AN INTERMETAL DIELECTRIC LAYER WITH A STOPPER LAYER EMBEDDED THEREIN
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 2, R&D RD., VI, SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU, TAIWAN |
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| LAW OFFICE OF LIAUH AND ASSOCIATES |
| W. WAYNE LIAUH |
| 4224 WAIALAE AVE., SUITE 5-388 |
| HONOLULU, HI 96816 |
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