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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
11/07/2000
Application #:
09409888
Filing Dt:
10/01/1999
Inventors:
SYUN-MING JANG, YING-HO CHEN, SHWANG MING JENG, CHEN-HUA YU
Title:
METHOD FOR FORMING GAP FILLING SILICON OXIDE INTERMETAL DIELECTRIC (IMD) LAYER FORMED EMPLOYING OZONE-TEOS
Assignment: 1
Reel/Frame:
010297/0612Recorded: 10/01/1999Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
09/10/1999
Exec Dt:
09/10/1999
Exec Dt:
09/10/1999
Exec Dt:
09/10/1999
Assignee:
SCIENCE-BASED INDUSTRIAL PARK
121 PARK AVE. 3
HSIN-CHU, TAIWAN R.O.C
Correspondent:
GEORGE O. SAILE
20 MCINTOSH DRIVE
POUGHKEEPSIE, NY 12603

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