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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
02/27/2001
Application #:
09500450
Filing Dt:
02/09/2000
Inventors:
Takashi Udagawa, Kazutaka Terashima, Suzuka Nishimura, Takuji Tsuzaki
Title:
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
Assignment: 1
Reel/Frame:
029489/0249Recorded: 12/18/2012Pages: 6
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
12/03/2012
Assignee:
1, HARUHINAGAHATA
KIYOSU-SHI, AICHI, JAPAN 452-8564
Correspondent:
SUGHRUE MION, PLLC
2100 PENNSYLVANIA AVE, NW
SUITE 800
WASHINGTON, DC 20037

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