Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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10/16/2001
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Application #:
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09564178
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Filing Dt:
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05/03/2000
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Inventors:
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Alexander Kalnitsky, Dmitri A Choutov, Robert F Scheer, Fanling H Yang, Thomas W Dobson et al
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Title:
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Method of forming a shallow and deep trench isolation (SDTI) suitable for silicon on insulator (SOI) substrates
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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120 SAN GABRIEL DRIVE |
SUNNYVALE, CALIFORNIA 94086 |
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BLAKELY, SOKOLOFF, TAYLOR & ZAFMAN, LLP |
GEORGE L. FOUNTAIN |
12400 WILSHIRE BOULEVARD |
7TH FLOOR |
LOS ANGELES, CA 90025 |
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