Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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01/28/2003
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Application #:
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09596747
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Filing Dt:
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06/19/2000
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Inventors:
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Mo-chiun Yu, Syun-Ming Jang
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Title:
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METHOD FOR MAKING FET GATE OXIDES WITH DIFFERENT THICKNESSES USING A THIN SILICON NITRIDE LAYER AND A SINGLE OXIDATION STEP
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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SCIENCE-BASED INDUSTRIAL PARK |
121 PARK AVE. 3 |
HSIN-CHU, TAIWAN R.O.C |
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GEORGE O. SAILE |
20 MCINTOSH DRIVE |
POUGHKEEPSIE, NY 12603 |
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