Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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01/27/2004
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Application #:
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09048288
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Filing Dt:
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03/26/1998
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Inventors:
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TAKASHI NOGUCHI, MITSUO SONEDA
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Title:
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METHOD OF FORMING N-AND P- CHANNEL FIELD EFFECT TRANSISTORS ON THE SAME SILICON LAYER HAVING A STRAIN EFFECT
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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7-35 KITASHINAGAWA 6-CHOME SHINAGAWA-KU |
TOKYO, JAPAN |
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RADER, FISHMAN & GRAUER |
RONALD P. KANANEN, ESQ. |
SUITE 501 |
1233 20TH STREET, NW |
WASHINGTON, D.C. 20036 |
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