Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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05/17/2005
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Application #:
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10641548
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Filing Dt:
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08/15/2003
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Inventors:
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Qi Xiang, Ming Ren Lin, Minh V. Ngo, Haihong Wang
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Title:
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METHOD OF FORMING STRAINED SILICON MOSFET HAVING IMPROVED THRESHOLD VOLTAGE UNDER THE GATE ENDS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1160 KERN AVENUE |
| SUNNYVALE, CALIFORNIA 94086-3453 |
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| FOLEY & LARDNER |
| DAVID A. BLUMENTHAL |
| 2029 CENTURY PARK EAST |
| SUITE 3500 |
| LOS ANGELES, CA 90067-3021 |
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