Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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12/29/2009
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Application #:
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12149906
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Filing Dt:
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05/09/2008
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Publication #:
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Pub Dt:
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11/12/2009
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Inventors:
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Cheng-Ta Wu, Da-Yu Chuang, Yen-Da Chen, Lihan Lin
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Title:
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METHOD OF FORMING A SILICON NITRIDE LAYER ON A GATE OXIDE FILM OF A SEMICONDUCTOR DEVICE AND ANNEALING THE NITRIDE LAYER
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| HSINCHU SCIENCE PARK |
| NO. 19, LI-HSIN ROAD |
| HSINCHU, TAIWAN R.O.C. |
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| RICHARD V. BURGUJIAN |
| FINNEGAN, HENDERSON, FARABOW |
| GARRETT & DUNNER, L.L.P. |
| 901 NEW YORK AVENUE, N.W. |
| WASHINGTON, D.C. 20001-4413 |
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