Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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01/04/2011
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Application #:
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12200599
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Filing Dt:
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08/28/2008
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Publication #:
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Pub Dt:
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05/07/2009
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Inventors:
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Masamichi Suzuki, Masato Koyama, Yoshinori Tsuchiya, Akira Takashima, Hirotaka Nishino et al
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Title:
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A COMPLEMETARY MISFET SEMICONDUCTOR DEVICE HAVING AN ATOMIC DENSITY RATIO ALUMINUM/LANTHANUM (AL/LA)IN THE GATE INSULATING LAYER OF PMIS IS LARGER THAN THAT OF THE NMIS.
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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1-1, SHIBAURA 1-CHOME, MINATO-KU |
TOKYO, JAPAN 105-8001 |
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FINNEGAN HENDERSON |
901 NEW YORK AVENUE NW |
WASHINGTON DC, DC 20001 |
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