Patent Assignment Abstract of Title
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Total Assignments:
4
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Patent #:
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Issue Dt:
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01/25/2011
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Application #:
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11573387
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Filing Dt:
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02/07/2007
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Publication #:
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Pub Dt:
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09/20/2007
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Inventors:
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Kouzo Nakamura, Susumu Maeda, Kouichirou Hayashida, Takahisa Sugiman et al
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Title:
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NITROGEN DOPED SILICON WAFER AND MANUFACTURING METHOD THEREOF
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 25-1, SHINOMIYA 3-CHOME |
| HIRATSUKA-SHI, KANAGAWA, JAPAN 254-0014 |
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| SUSAN C. DINICOLA |
| 10 FAWCETT STREET |
| CAMBRIDGE, MA 02138 |
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Assignment:
2
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CORRECTIVE ASSIGNMENT TO CORRECT THE THE TITLE SHOULD READ: NITROGEN DOPED SILICON WAFER AND MANUFACTURING METHOD THEREOF PREVIOUSLY RECORDED ON REEL 019315 FRAME 0287. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT.
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| 25-1, SHINOMIYA 3-CHOME, HIRATSKA-SHI |
| KANAGAWA, JAPAN 254-0014 |
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| OCCHIUTI ROHLICEK & TSAO LLP |
| 10 FAWCETT STREET |
| CAMBRIDGE, MA 02138 |
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Assignment:
3
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 25-1, SHINOMIYA 3-CHOME, HIRATSUKA-SHI |
| KANAGAWA, JAPAN 254-0014 |
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| OCCHIUTI ROHLICEK & TSAO LLP |
| 10 FAWCETT STREET |
| CAMBRIDGE, MA 02138 |
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Assignment:
4
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CHANGE OF NAME (SEE DOCUMENT FOR DETAILS).
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| 25-1, SHINOMIYA 3-CHOME, HIRATSUKA-SHI |
| KANAGAWA, JAPAN 254-0014 |
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| OCCHIUTI ROHLICEK & TSAO LLP |
| 10 FAWCETT STREET |
| CAMBRIDGE, MA 02138 |
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