Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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10/15/2013
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Application #:
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13322859
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Filing Dt:
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11/28/2011
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Publication #:
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Pub Dt:
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03/22/2012
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Inventors:
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Na Bai, Chen Hu, Jun Yang, Jie Li, Longxing Shi
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Title:
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SUB-THRESHOLD MEMORY CELL CIRCUIT WITH HIGH DENSITY AND HIGH ROBUSTNESS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 2 SIPAILOU |
| XUANWU, NANJING |
| JIANGSU, CHINA 210018 |
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| MICHAEL M. BALLARD |
| 60 EAST SOUTH TEMPLE |
| 1000 EAGLE GATE TOWER |
| SALT LAKE CITY, UT 84111 |
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Assignment:
2
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CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE TO BE SOUTHEAST UNIVERSITY INSTEAD OF SOUTHWEST UNIVERSITY PREVIOUSLY RECORDED ON REEL 027284 FRAME 0795. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT TO SOUTHEAST UNIVERSITY.
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| NO. 2 SIPAILOU |
| XUANWU, NANJING |
| JIANGSU, CHINA 210018 |
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| MICHAEL M. BALLARD |
| 60 EAST SOUTH TEMPLE |
| 1000 EAGLE GATE TOWER |
| SALT LAKE CITY, UT 84111 |
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