Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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09/02/2014
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Application #:
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12493765
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Filing Dt:
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06/29/2009
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Publication #:
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Pub Dt:
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01/14/2010
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Inventors:
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Akinori Koukitu, Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii
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Title:
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EPITAXIAL GROWTH METHOD OF A ZINC OXIDE BASED SEMICONDUCTOR LAYER, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 3-8-1, HARUMI-CHO, FUCHU-SHI |
| TOKYO, JAPAN |
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| 21, SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO-SHI |
| KYOTO 615-8585, JAPAN |
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| 3-1 AKASAKA 5-CHOME, MINATO-KU |
| TOKYO, JAPAN |
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| STEVEN M. RABIN |
| RABIN & BERDO, PC |
| 1101 14TH ST., NW |
| SUITE 500 |
| WASHINGTON, DC 20005 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 3-8-1, HARUMI-CHO, FUCHU-SHI |
| TOKYO, JAPAN |
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| 21, SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO-SHI |
| KYOTO, JAPAN 615-8585 |
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| RABIN & BERDO, P.C. |
| 1101 14TH ST., N.W., SUITE 500 |
| WASHINGTON, DC 20005 |
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