Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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05/19/2015
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Application #:
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13686696
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Filing Dt:
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11/27/2012
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Publication #:
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Pub Dt:
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05/29/2014
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Inventors:
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Yi-Sheng Chen, Chen-Liang Chu, Shih-Kuang Hsiao, Fei-Yun Chen, Kong-Beng Thei
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Title:
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High Voltage Drain-Extended MOSFET Having Extra Drain-OD Addition
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 8, LI-HSIN RD. 6 |
| SCIENCE-BASED INDUSTRIAL PARK |
| HSIN-CHU, TAIWAN 300-77 |
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| SLATER & MATSIL, L.L.P. |
| 17950 PRESTON ROAD |
| SUITE 1000 |
| DALLAS, TX 75252 |
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