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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
11/14/2017
Application #:
14910169
Filing Dt:
02/04/2016
Publication #:
Pub Dt:
06/09/2016
Inventors:
Takeyoshi Masuda, Taku Horii
Title:
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE WHERE DEPRESSION SUPRESSION LAYER IS FORMED ON BACKSIDE SURFACE OF BASE SUBSTRATE OPPOSITE TO MAIN SURFACE ON WHICH EPITAXIAL LAYER IS FORMED
Assignment: 1
Reel/Frame:
037668/0001Recorded: 02/04/2016Pages: 6
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
01/09/2016
Exec Dt:
12/25/2015
Assignee:
5-33, KITAHAMA 4-CHOME, CHUO-KU
OSAKA-SHI, OSAKA, JAPAN 541-0041
Correspondent:
MICHAEL A. SARTORI, PH.D.
P.O. BOX 34385
VENABLE LLP
WASHINGTON, DC 20043-9998

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