Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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06/12/2018
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Application #:
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15272993
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Filing Dt:
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09/22/2016
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Publication #:
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Pub Dt:
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05/04/2017
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Inventors:
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Tetsuro Ishiguro, Atsushi Yamada, NORIKAZU NAKAMURA
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Title:
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GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR (GaN-HEMT) DEVICE WITH AN IRON-DOPED CAP LAYER AND METHOD OF MANUFACTURING THE SAME
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1-1, KAMIKODANAKA 4-CHOME, NAKAHARA-KU |
| KAWASAKI-SHI, KANAGAWA, JAPAN 211-8588 |
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| FUJITSU PATENT CENTER |
| 2318 MILL ROAD |
| ALEXANDRIA, VA 22314 |
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