Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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10062455
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Filing Dt:
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02/05/2002
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Publication #:
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Pub Dt:
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08/15/2002
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Inventors:
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Junichi Murota, Masao Sakuraba, Takashi Matsuura, Toshiaki Tsuchiya
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Title:
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MOS field-effect transistor comprising layered structure including Si layer and SiGe layer OR SiGeC layer as channel regions
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 2-1-1, KATAHIRA, AOBA-KU |
| SENDAI, 980-8577, JAPAN |
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| OBLON, SPIVAK, MCCLELAND, MAIER & |
| NEUSTADT, ATTORNEYS AT LAW |
| MARVIN J. SPIVAK |
| 1755 JEFFERSON DAVIS HWY., FOURTH FLOOR |
| ARLINGTON, VIRGINIA 22202 |
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