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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
10105633
Filing Dt:
03/26/2002
Publication #:
Pub Dt:
10/17/2002
Inventors:
Hirokazu Takahashi, Hiroyuki Ota, Atsushi Watanabe
Title:
Nitride semiconductor device having a doped group III nitride semiconductor contact layer
Assignment: 1
Reel/Frame:
013023/0988Recorded: 06/19/2002Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
05/21/2002
Exec Dt:
05/17/2002
Exec Dt:
05/17/2002
Assignee:
4-1, MEGURO 1-CHOME
MEGURO-KU, TOKYO, JAPAN
Correspondent:
MORGAN, LEWIS & BOCKIUS LLP
JOHN G. SMITH
1111 PENNSYLVANIA AVE., NW
WASHINGTON, DC 20004

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