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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
Issue Dt:
01/11/2005
Application #:
10338156
Filing Dt:
01/08/2003
Publication #:
Pub Dt:
07/08/2004
Inventors:
Chew Hoe Ang, Eng-Hua Lim, Randall Cher Liang Cha, Jia Zhen Zheng, Elgin Quek, Daniel Yen et al
Title:
METHOD TO PRODUCE DUAL GATES (ONE METAL AND ONE POLY OR METAL SILICIDE) FOR CMOS DEVICES USING SPUTTERED METAL DEPOSITION, METALLIC ION IMPLANTATION, OR SILICON IMPLANTATION, AND LASER ANNEALING
Assignment: 1
Reel/Frame:
013647/0813Recorded: 01/08/2003Pages: 7
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Assignee:
60 WOODLANDS INDUSTRIAL PARK D
SINGAPORE 738406, SINGAPORE
Correspondent:
GEORGE O. SAILE
28 DAVID AVENUE
POUGHKEEPSIE, NY 12603
Assignment: 2
Reel/Frame:
015631/0789Recorded: 07/30/2004Pages: 9
Conveyance:
CORRECTED ASSIGNMENT TO CORRECT THE NAME OF THE SIXTH INVENTOR. PREVIOUSLY RECORDED ON REEL 013647 FRAME 0813
Assignors:
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Exec Dt:
08/16/2002
Assignee:
STREET 2
60 WOODLANDS INDUSTRIAL PARK D.
SINGAPORE, SINGAPORE 738406
Correspondent:
GEORGE O. SAILE
28 DAVIS AVENUE
POOUGHKEEPSIE, NY 12603

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