Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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11/27/2007
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Application #:
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11022056
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Filing Dt:
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12/23/2004
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Publication #:
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Pub Dt:
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09/08/2005
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Inventors:
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Hyeoung-Won Seo, Du-Heon Song, Dae-Joong Won, Sang-Hyun Lee
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Title:
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METHOD OF MANUFACTURING RECESS TYPE MOS TRANSISTOR HAVING A DUAL DIODE IMPURITY LAYER STRUCTURE
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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416 MAETAN-DONG, YEONGTONG-GU |
SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF |
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MARGER JOHNSON & MCCOLLOM, PC. |
1030 S.W. MORRISON STREET |
PORTLAND, OH 97205 |
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