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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
NONE
Issue Dt:
Application #:
11038165
Filing Dt:
01/21/2005
Publication #:
20060022228
Pub Dt:
02/02/2006
Inventors:
Takeshi Hoshi, Tsuyoshi Saito, Hitoshi Kato, Koichi Orito
Title:
Method of manufacturing silicon nitride film, method of manufacturing semiconductor device, and semiconductor device
Assignment: 1
Reel/Frame:
016212/0976Recorded: 01/21/2005Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
HOSHI, TAKESHI
Exec Dt:
12/08/2004
SAITO, TSUYOSHI
Exec Dt:
12/08/2004
KATO, HITOSHI
Exec Dt:
12/08/2004
ORITO, KOICHI
Exec Dt:
12/08/2004
Assignees:
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
16-1, ONOGAWA, TSUKUBA-SHI, IBARAKI,
305-8569, JAPAN
TOKYO ELECTRON LIMITED
3-6, AKASAKA 5-CHOME, MINATO-KU
TOKYO 107-8481, JAPAN
Correspondent:
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUST
1940 DUKE STREET
ALEXANDRIA, VA 22314
Assignment: 2
Reel/Frame:
017582/0536Recorded: 05/04/2006Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
Exec Dt:
04/25/2006
Assignee:
TOKYO ELECTRON LIMITED
3-6, AKASAKA 5-CHOME
MINATO-KU, TOKYO 107-8481, JAPAN
Correspondent:
OBLON, SPIVAK, MCCLELLAND, MAIER & NEUST
1940 DUKE STREET
ALEXANDRIA, VA 22314

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