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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
11355946
Filing Dt:
02/17/2006
Publication #:
Pub Dt:
08/24/2006
Inventors:
Naoshi Adachi, Yukio Komatsu
Title:
Method for forming region of high oxygen concentration under the surface of silicon wafers via heat treatment
Assignment: 1
Reel/Frame:
018016/0299Recorded: 07/27/2006Pages: 2
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
02/06/2006
Exec Dt:
02/06/2006
Assignee:
2-1, SHIBAURA 1-CHOME, MINATO-KU
TOKYO, JAPAN 105-8634
Correspondent:
CLARK AND BRODY
1090 VERMONT AVENUE, NW
SUITE 250
WASHINGTON, DC 20005

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