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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
11583491
Filing Dt:
10/18/2006
Publication #:
Pub Dt:
04/24/2008
Inventors:
Liang-Gi Yao, Jin Ying, Hun-Jan Tao, Shih-Chang Chen, Mong-Song Liang
Title:
Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devices
Assignment: 1
Reel/Frame:
018558/0446Recorded: 11/28/2006Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
09/25/2006
Exec Dt:
09/28/2006
Exec Dt:
09/25/2006
Exec Dt:
09/25/2006
Exec Dt:
09/25/2006
Assignee:
NO. 8, LI-HSIN RD. 6
SCIENCE-BASED INDUSTRIAL PARK
HSIN-CHU, TAIWAN 300-77
Correspondent:
SLATER & MATSIL, L.L.P.
17950 PRESTON ROAD, SUITE 1000
DALLAS, TX 75252

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