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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
11653802
Filing Dt:
01/16/2007
Publication #:
Pub Dt:
07/17/2008
Inventors:
Tingkai Li, Jer-Shen Maa, Douglas J. Tweet, Wei-Wei Zhuang, Sheng Teng Hsu
Title:
Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies
Assignment: 1
Reel/Frame:
018810/0452Recorded: 01/16/2007Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
01/02/2007
Exec Dt:
01/02/2007
Exec Dt:
01/03/2007
Exec Dt:
01/10/2007
Exec Dt:
01/02/2007
Assignee:
5750 N.W. PACIFIC RIM BLVD.
CAMAS, WASHINGTON 98607
Correspondent:
ROBERT D. VARITZ
4915 S.E. 33RD PLACE
PORTLAND, OR 97202

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