Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11919705
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Filing Dt:
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10/31/2007
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Publication #:
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Pub Dt:
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02/05/2009
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Inventors:
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Tomoki Uemura, Shinsuke Fujiwara, Takuji Okahisa, Ryu Hirota, Hideaki Nakahata
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Title:
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Method for Producing GaxIn1-xN(0<x<1) Crystal Gaxin1-xN(0<x<1) Crystalline Substrate, Method for Producing GaN Crystal, GaN Crystalline Substrate, and Product
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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5-33, KITAHAMA 4-CHOME, CHUO-KU |
OSAKA-SHI, OSAKA 541-0041, JAPAN |
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MCDERMOTT WILL & EMERY LLP |
600 13TH STREET, N.W. |
WASHINGTON, D.C. 20005-3096 |
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