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Patent Assignment Abstract of Title
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Total Assignments: 3
Patent #:
NONE
Issue Dt:
Application #:
12154605
Filing Dt:
05/23/2008
Publication #:
Pub Dt:
11/26/2009
Inventors:
Luona Goh, Jingze Tian, Wei Lu, Mei Sheng Zhou
Title:
High shrinkage stress silicon nitride (SiN) layer for NFET improvement
Assignment: 1
Reel/Frame:
021056/0030Recorded: 05/23/2008Pages: 6
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
05/22/2008
Exec Dt:
05/22/2008
Exec Dt:
05/22/2008
Exec Dt:
05/23/2008
Assignee:
60 WOODLANDS INDUSTRIAL PARK D
STREET 2
SINGAPORE 738406
Correspondent:
DOCKET CLERK
P.O. DRAWER 800889
DALLAS, TEXAS 75380
Assignment: 2
Reel/Frame:
024476/0268Recorded: 06/02/2010Pages: 3
Conveyance:
CHANGE OF NAME (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
01/22/2010
Assignee:
60 WOODLANDS INDUSTRIAL PARK D, STREET TWO
SINGAPORE 738406, SINGAPORE
Correspondent:
MUNCK CARTER, LLP
P.O. DRAWER 800889
DOCKET CLERK
DALLAS, TX 75380
Assignment: 3
Reel/Frame:
024476/0275Recorded: 06/02/2010Pages: 3
Conveyance:
CHANGE OF NAME (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
01/22/2010
Assignee:
60 WOODLANDS INDUSTRIAL PARK D, STREET TWO
SINGAPORE 738406, SINGAPORE
Correspondent:
MUNCK CARTER, LLP
P.O. DRAWER 800889
DOCKET CLERK
DALLAS, TX 75380

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