Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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09/24/2013
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Application #:
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12503430
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Filing Dt:
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07/15/2009
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Publication #:
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Pub Dt:
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01/20/2011
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Inventor:
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Qingchun Zhang
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Title:
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HIGH BREAKDOWN VOLTAGE WIDE BAND-GAP MOS-GATED BIPOLAR JUNCTION TRANSISTORS WITH AVALANCHE CAPABILITY
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 4600 SILICON DRIVE |
| DURHAM, NORTH CAROLINA 27703 |
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| MYERS BIGEL SIBLEY & SAJOVEC, P.A. |
| P.O. BOX 37428 |
| RALEIGH, NC 27627 |
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Assignment:
2
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SECURITY INTEREST (SEE DOCUMENT FOR DETAILS).
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| 214 N. TRYON STREET, 27TH FLOOR |
| MAIL CODE CN-NC-H27A |
| CHARLOTTE, NORTH CAROLINA 28202 |
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| NIKOLAI DOKKEDAHL |
| 1285 AVENUE OF THE AMERICAS |
| PAUL WEISS RIFKIND WHARTON &GARRISON LLP |
| NEW YORK, NY 10019-6064 |
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