Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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12753486
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Filing Dt:
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04/02/2010
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Publication #:
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Pub Dt:
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10/06/2011
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Inventors:
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RU-YI SU, Fu-Chih Yang, Chun Lin Tsai, Ker-Hsiao Huo, Chia-Chin Shen, Hsiao-Chin Tuan et al
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Title:
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HIGH VOLTAGE LDMOS TRANSISTOR HAVING A SECOND WELL REGION FORMED ON SURFACE OF FIRST WELL REGION, EXTENDED BEYOND THE GATE STRUCTURE AND UNDER THE INSULATING STRUCTURE.
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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NO. 8, LI-HSIN RD. 6 |
SCIENCE-BASED INDUSTRIAL PARK |
HSIN-CHU, TAIWAN 300-77 |
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HAYNES AND BOONE, LLP |
2323 VICTORY AVENUE |
SUITE 700 |
DALLAS, TX 75219 |
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