Patent Assignment Abstract of Title
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Total Assignments:
3
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Patent #:
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Issue Dt:
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10/07/2014
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Application #:
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13328423
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Filing Dt:
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12/16/2011
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Publication #:
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Pub Dt:
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06/20/2013
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Inventors:
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Yun Wang, Tony P. Chiang, Imran Hashim, Tim Minvielle, Takeshi Yamaguchi
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Title:
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NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A METAL NITRIDE CONTAINING SWITCHING LAYER
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 3011 N. FIRST STREET |
| SAN JOSE, CALIFORNIA 95134 |
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| INTERMOLECULAR, INC. |
| 3011 N. FIRST STREET |
| SAN JOSE, CA 95134 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 3011 N. FIRST STREET |
| SAN JOSE, CALIFORNIA 95134 |
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| 1-1, SHIBAURA 1-CHOME, MINATO-KU |
| TOKYO, JAPAN 105-8001 |
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| 601 MCCARTHY BOULEVARD |
| MILPITAS, CALIFORNIA 95034 |
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| INTERMOLECULAR, INC. |
| 3011 N. FIRST STREET |
| SAN JOSE, CA 95134 |
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Assignment:
3
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 6900 DALLAS PARKWAY |
| SUITE 325 |
| PLANO, TEXAS 75024 |
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| SANDISK |
| 951 SANDISK DRIVE |
| PATENT DEPARTMENT/SIMONA BENJAMIN |
| MILPITAS, CA 95035 |
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