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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
07/11/2017
Application #:
14180446
Filing Dt:
02/14/2014
Publication #:
Pub Dt:
08/14/2014
Inventor:
Hideo KAWANISHI
Title:
METHOD OF FABRICATING A P TYPE NITRIDE SEMICONDUCTOR LAYER DOPED WITH CARBON
Assignment: 1
Reel/Frame:
032295/0602Recorded: 02/25/2014Pages: 4
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
02/21/2014
Assignee:
148-29, GASAN-DONG
GEUMCHEON-GU
SEOUL, KOREA, REPUBLIC OF 153-801
Correspondent:
H.C. PARK & ASSOCIATES, PLC
1894 PRESTON WHITE DRIVE
RESTON, VA 20191

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