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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
01/30/2018
Application #:
15401867
Filing Dt:
01/09/2017
Publication #:
Pub Dt:
04/27/2017
Inventors:
Kuo-Cheng Ching, Chih-Hao Wang, Zhiqiang Wu, Carlos H Diaz
Title:
Structure And Method For FinFET Device With Buried Sige Oxide
Assignment: 1
Reel/Frame:
040904/0850Recorded: 01/09/2017Pages: 4
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
11/19/2013
Exec Dt:
11/19/2013
Exec Dt:
11/19/2013
Exec Dt:
11/19/2013
Assignee:
NO. 8, LI-HSIN RD. 6
SCIENCE-BASED INDUSTRIAL PARK
HSIN-CHU, TAIWAN 300-77
Correspondent:
HAYNES AND BOONE, LLP IP SECTION
2323 VICTORY AVENUE
SUITE 700
DALLAS, TX 75219

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