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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
Issue Dt:
01/07/2020
Application #:
15738458
Filing Dt:
12/20/2017
Publication #:
Pub Dt:
05/17/2018
Inventors:
William Alan Doolittle, Evan A. Clinton, Chloe A.M. Fabien, Brendan Patrick Gunning et al
Title:
System and Method for Increasing III-Nitride Semiconductor Growth Rate and Reducing Damaging Ion Flux
Assignment: 1
Reel/Frame:
044757/0785Recorded: 01/29/2018Pages: 9
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
02/27/2017
Exec Dt:
02/27/2017
Exec Dt:
01/23/2017
Exec Dt:
12/09/2016
Exec Dt:
01/28/2017
Assignee:
505 TENTH STREET, N.W.
ATLANTA, GEORGIA 30332-0415
Correspondent:
RONNA A. BERMAN
600 PEACHTREE STREET
SUITE 5200
ATLANTA, GA 30308-2216
Assignment: 2
Reel/Frame:
045616/0221Recorded: 03/16/2018Pages: 2
Conveyance:
CONFIRMATORY LICENSE (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
02/26/2018
Assignee:
2415 EISENHOWER AVENUE
ROOM W 18000
ALEXANDRIA, VIRGINIA 22314
Correspondent:
NATIONAL SCIENCE FOUNDATION
2415 EISENHOWER AVENUE
ROOM W 18000
ALEXANDRIA, VA 22314

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