Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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04/27/2021
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Application #:
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15983455
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Filing Dt:
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05/18/2018
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Publication #:
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Pub Dt:
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09/20/2018
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Inventors:
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Zheng Lu, Tse-Wei Lu, Gaurab Samanta, Feng-Chien Tsai
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Title:
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Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 9 BATTERY ROAD |
| #15-01, STRAITS TRADING BUILDING |
| SINGAPORE, SINGAPORE 049910 |
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| RICHARD A. SCHUTH (SUNEDISON) ARMSTRONG |
| 7700 FORSYTH BOULEVARD |
| SUITE 1800 |
| ST. LOUIS, MO 63105 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 8. INDUSTRIAL EAST ROAD |
| SCIENCE-BASED INDUSTRIAL PARK |
| HSINCHU, TAIWAN R.O.C. |
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| RICHARD A. SCHUTH |
| ARMSTRONG TEASDALE LLP |
| 7700 FORSYTH BLVD., SUITE 1800 |
| ST. LOUIS, MO 63105 |
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