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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
10665773
Issue Dt:
05/26/2020
Application #:
15881035
Filing Dt:
01/26/2018
Publication #:
20190237661
Pub Dt:
08/01/2019
Inventors:
Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu
Title:
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresistive Random Access Memory (MRAM)
Assignment: 1
Reel/Frame:
045187/0558Recorded: 03/13/2018Pages: 6
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
IWATA, JODI MARI
Exec Dt:
12/14/2017
JAN, GUENOLE
Exec Dt:
12/15/2017
TONG, RU-YING
Exec Dt:
12/15/2017
SUNDAR, VIGNESH
Exec Dt:
01/22/2018
ZHU, JIAN
Exec Dt:
12/15/2017
LIU, HUANLONG
Exec Dt:
12/15/2017
Assignee:
HEADWAY TECHNOLOGIES, INC
678 S. HILLVIEW DRIVE
MILPITAS, CALIFORNIA 95035
Correspondent:
SAILE ACKERMAN LLC
28 DAVIS AVENUE
POUGHKEEPSIE, NY 12603
Assignment: 2
Reel/Frame:
048692/0917Recorded: 03/25/2019Pages: 27
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
HEADWAY TECHNOLOGIES, INC.
Exec Dt:
02/04/2019
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN ROAD 6
HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondent:
HAYNES AND BOONE, LLP
2323 VICTORY AVENUE, SUITE 4000
IP SECTION
DALLAS, TX 75219

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