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Patent Assignment Abstract of Title
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Total Assignments: 2
Patent #:
Issue Dt:
04/14/2020
Application #:
15933479
Filing Dt:
03/23/2018
Publication #:
Pub Dt:
09/26/2019
Inventors:
Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang, Ru-Ying Tong
Title:
Novel Free Layer Structure in Magnetic Random Access Memory (MRAM) for Mo or W Perpendicular Magnetic Anisotropy (PMA) Enhancing Layer
Assignment: 1
Reel/Frame:
045713/0711Recorded: 05/04/2018Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
03/13/2018
Exec Dt:
03/13/2018
Exec Dt:
03/13/2018
Exec Dt:
03/13/2018
Assignee:
678 S. HILLVIEW DRIVE
MILPITAS, CALIFORNIA 95035
Correspondent:
SAILE ACKERMAN LLC
28 DAVIS AVENUE
POUGHKEEPSIE, NY 12603
Assignment: 2
Reel/Frame:
048692/0917Recorded: 03/25/2019Pages: 27
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignor:
Exec Dt:
02/04/2019
Assignee:
8, LI-HSIN ROAD 6
HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondent:
HAYNES AND BOONE, LLP
2323 VICTORY AVENUE, SUITE 4000
IP SECTION
DALLAS, TX 75219

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