Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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Issue Dt:
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08/10/2021
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Application #:
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16844154
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Filing Dt:
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04/09/2020
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Publication #:
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Pub Dt:
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07/30/2020
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Inventors:
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Vignesh Sundar, Ru-Ying Tong, Hideaki Fukuzawa, Yu-Jen Wang
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Title:
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Novel Free Layer Structure in Magnetic Random Access Memory (MRAM) for Mo or W Perpendicular Magnetic Anisotropy (PMA) Enhancing Layer
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 682 SOUTH HILLVIEW DR. |
| MILPITAS, CALIFORNIA 95035 |
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| HAYNES AND BOONE, LLP (24061) IP SECTION |
| 2323 VICTORY AVENUE |
| SUITE 700 |
| DALLAS, TX 75219 |
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Assignment:
2
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 8, LI-HSIN RD. 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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| HAYNES AND BOONE, LLP (24061) IP SECTION |
| 2323 VICTORY AVENUE |
| SUITE 700 |
| DALLAS, TX 75219 |
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