Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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05/23/2023
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Application #:
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17409341
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Filing Dt:
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08/23/2021
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Publication #:
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Pub Dt:
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12/09/2021
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Inventors:
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Perng-Fei Yuh, Ku-Feng Lin, Hiroki Noguchi, Yih Wang, Jui-Che Tsai, Fu-An Wu
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Title:
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NON-VOLATILE STATIC RANDOM ACCESS MEMORY (nvSRAM) WITH MULTIPLE MAGNETIC TUNNEL JUNCTION CELLS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 8, LI-HSIN 6 ROAD |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 30077 |
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| FOLEY & LARDNER LLP |
| 3000 K STREET N.W. |
| SUITE 600 |
| WASHINGTON, DC 20007-5109 |
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