Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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02/06/2024
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Application #:
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17855155
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Filing Dt:
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06/30/2022
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Publication #:
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Pub Dt:
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10/20/2022
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Inventors:
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Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsing-Lien Lin, Hsun-Chung Kuang et al
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Title:
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RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 8, LI-HSIN RD. 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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| ESCHWEILER & POTASHNIK, LLC |
| 629 EUCLID AVE. |
| SUITE 1101 |
| CLEVELAND, OH 44114 |
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