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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
17651869
Filing Dt:
02/21/2022
Publication #:
Pub Dt:
01/12/2023
Inventors:
Hsin-Yi Lee, Weng Chang, Hsiang-Pi Chang, Huang-Lin Chao, Chung-Liang Cheng, Chi On Chui et al
Title:
Gate Structure in Semiconductor Device and Method of Forming the Same
Assignment: 1
Reel/Frame:
059058/0334Recorded: 02/21/2022Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
02/08/2022
Exec Dt:
02/08/2022
Exec Dt:
02/13/2022
Exec Dt:
02/08/2022
Exec Dt:
02/08/2022
Exec Dt:
02/08/2022
Exec Dt:
02/21/2022
Exec Dt:
02/09/2022
Exec Dt:
02/08/2022
Exec Dt:
02/21/2022
Assignee:
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondent:
SLATER MATSIL, LLP
17950 PRESTON RD., SUITE 1000
DALLAS, TX 75252

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