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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
17591174
Filing Dt:
02/02/2022
Publication #:
Pub Dt:
08/03/2023
Inventors:
Po-Ting Lin, Yu-Ming Lin, Yen-Chieh Huang, Song-Fu Liao, Hai-Ching Chen, Sai-Hooi Yeong et al
Title:
DOUBLE GATE METAL-FERROELECTRIC-METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MFMIS-FET) STRUCTURE
Assignment: 1
Reel/Frame:
059208/0663Recorded: 03/09/2022Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
02/07/2022
Exec Dt:
02/06/2022
Exec Dt:
02/06/2022
Exec Dt:
02/06/2022
Exec Dt:
02/06/2022
Exec Dt:
02/06/2022
Exec Dt:
02/06/2022
Assignee:
8, LI-HSIN RD. 6
HSINCHU SCIENCE PARK
HSINCHU, TAIWAN 300-78
Correspondent:
ESCHWEILER & POTASHNIK, LLC
629 EUCLID AVE.
SUITE 1101
CLEVELAND, OH 44114

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