Patent Assignment Details
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| Reel/Frame: | 004771/0707 | |
| Pages: | 2 |
| | Recorded: | 10/16/1987 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST. |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/26/1989
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Application #:
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07108886
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Filing Dt:
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10/16/1987
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Title:
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NON-VOLATILE MEMORY CELL HAVING SI-RICH SILICON NITRIDE CHARGE TRAPPING LAYER
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Assignee
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| A CORP. OF NEW YORK |
| ARMONK, NEW YORK 10504 |
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Correspondence name and address
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MARK F. CHADURJIAN
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IBM CORP., DEPT. 915/972-2
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1000 RIVER ST.
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ESSEX JUNCTION, VT 05452
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