Patent Assignment Details
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| Reel/Frame: | 004850/0704 | |
| Pages: | 2 |
| | Recorded: | 04/19/1988 | | |
| Conveyance: | ASSIGNMENT OF A PART OF ASSIGNORS INTEREST |
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Total properties:
1
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Patent #:
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Issue Dt:
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08/22/1989
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Application #:
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07123497
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Filing Dt:
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11/20/1987
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Title:
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METHOD FOR EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTOR USING MOCVD WITH MOLECULAR LAYER EPITAXY
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Assignees
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| 5-2, NAGATACHO 2-CHOME, CHIYODA-KU |
| TOKYO, JAPAN |
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| 6-16, KOMEGAFUKURO 1-CHOME SENDAI-SHI |
| MIYAGI-KEN, JAPAN |
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| 7-12, TORANOMON 1-CHOME, MINATO-KU |
| TOKYO, JAPAN |
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| 18 KEIHAN-HONDORI 2-CHOME, MORIGUCHI-SHI |
| OSAKA-FU, JAPAN (5.5%) |
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Correspondence name and address
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DARBY & DARBY
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THE CHRYSLER BLDG.
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405 LEXINGTON AVE.
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NEW YORK, NY 10174
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