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Patent Assignment Details
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Reel/Frame:005214/0511   Pages: 1
Recorded: 01/16/1990
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST.
Total properties: 1
1
Patent #:
Issue Dt:
07/09/1991
Application #:
07417832
Filing Dt:
10/06/1989
Title:
METHOD FOR FABRICATING MOS SEMICONDUCTOR DEVICE OPERABLE IN A HIGH VOLTAGE RANGE USING POLYSILICON OUTDIFFUSION
Assignor
1
Exec Dt:
10/05/1989
Assignee
1
33-1, SHIBA 5-CHOME, MINATO-KU
TOKYO, JAPAN
Correspondence name and address
LAFF, WHITESELL, CONTE & SARET
401 NORTH MICHIGAN AVE.
CHICAGO, IL 60611

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