Patent Assignment Details
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| Reel/Frame: | 005510/0491 | |
| Pages: | 2 |
| | Recorded: | 11/14/1990 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST. |
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Total properties:
1
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Patent #:
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Issue Dt:
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06/13/1995
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Application #:
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07613343
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Filing Dt:
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11/14/1990
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Title:
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METHOD FOR GROWING ANTIMONY-DOPED SILICON SINGLE CRYSTAL
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Assignee
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| 4-2, MARUNOUCHI 1-CHOME, CHIYODA-KU, A CORP. OF JAPAN |
| TOKYO, JAPAN |
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Correspondence name and address
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JORDAN AND HAMBURG
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122 EAST 42ND STREET
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NEW YORK, NY 10168
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