Patent Assignment Details
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| Reel/Frame: | 008069/0639 | |
| Pages: | 3 |
| | Recorded: | 05/28/1996 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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03/03/1998
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Application #:
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08656991
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Filing Dt:
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05/28/1996
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Title:
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METHOD FOR FABRICATING DOUBLE SILICIDE GATE ELECTRODE STRUCTURES ON CMOS-FIELD EFFECT TRANSISTORS
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Assignee
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| SCIENCE-BASED INDUSTRIAL PARK |
| 121, PARK AVE. 3 |
| HSIN-CHU, TAIWAN R.O.C |
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Correspondence name and address
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GEORGE O. SAILE
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20 MCINTOSH DR.
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POUGHKEEPSIE, NY 12603
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