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Patent Assignment Details
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Reel/Frame:008374/0614   Pages: 3
Recorded: 02/04/1997
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
10/14/1997
Application #:
08708683
Filing Dt:
09/05/1996
Title:
RAISED SOURCE/DRAIN MOS TRANSISTOR WITH COVERED EPITAXIAL NOTCHES AND FABRICATION METHOD
Assignor
1
Exec Dt:
01/30/1997
Assignee
1
22-22, NAGAIKI-CHO, ABENO-KU
OSAKA 545, JAPAN
Correspondence name and address
SHARP MICROELECTRONICS TECHNOLOGY
GERALD W. MALISZEWSKI,
5700 NW PACIFIC RIM BLVD.
CAMAS, WA 98607

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